1.29μm GalnNAs multiple quantum-well ridge-waveguide laser diodes with improved performance

被引：76

作者：

Borchert, B ^{[1
]}

Egorov, AY ^{[1
]}

Illek, S ^{[1
]}

Komainda, M ^{[1
]}

Riechert, H ^{[1
]}

机构：

[1] Infineon Technol, Corp Res Photon, Munich, Germany

来源：

ELECTRONICS LETTERS | 1999年 / 35卷 / 25期

关键词：

D O I：

10.1049/el:19991513

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The authors report an MBE-grown GaInNAs MQW ridge-waveguide (RWG) emitting at 1.291 mu m with performance data that for the first time rival those of InGaAsP lasers. Among these data are threshold currents of 21 mA, slope efficiencies of 0.25W/A per facet and values of up to 110K for the characteristic temperature T-0. These important improvements in material quality should pave the way towards monolithically-grown 1.30 mu m GaInNAs VCSELs in the near future.

引用

页码：2204 / 2206

页数：3

共 6 条

[1] High power CW operation of InGaAsN lasers at 1.3μm [J].