LOW-THRESHOLD MESA-ETCHED VERTICAL-CAVITY INGAAS/GAAS SURFACE-EMITTING LASERS GROWN BY MOCVD

被引：6

作者：

MUKAIHARA, T

HAYASHI, Y

HATORI, N

OHNOKI, N

MATSUTANI, A

KOYAMA, F

IGA, K

机构：

[1] Tokyo Institute of Technology, Precision and Intelligence Laboratory, Yokohama 226, 4259 Nagatsuta, Midoriku

来源：

ELECTRONICS LETTERS | 1995年 / 31卷 / 08期

关键词：

VERTICAL CAVITY SURFACE EMITTING LASERS; HEAT TRANSFER;

D O I：

10.1049/el:19950431

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The authors have demonstrated a low threshold current of 0.33 mA and a threshold current density of 380 A/cm(2) for MOCVD-grown InGaAs/GaAs vertical-cavity surface-emitting lasers with a pillar etched structure. The thermal characteristic of the fabricated device including thermal resistance and junction temperature rise is also discussed. Judging from this experiment, further reduction of threshold current can be expected by reducing nonradiative recombination and electrical resistance.

引用

页码：647 / 648

页数：2

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