THERMAL-RESISTANCE OF TOP-SURFACE-EMITTING VERTICAL-CAVITY SEMICONDUCTOR-LASERS AND MONOLITHIC 2-DIMENSIONAL ARRAYS

被引：57

作者：

NAKWASKI, W

OSINSKI, M

机构：

[1] UNIV NEW MEXICO,DEPT ELECT & COMP ENGN,ALBUQUERQUE,NM 87131

[2] UNIV NEW MEXICO,DEPT PHYS & ASTRON,ALBUQUERQUE,NM 87131

来源：

ELECTRONICS LETTERS | 1992年 / 28卷 / 06期

关键词：

SEMICONDUCTOR LASERS; INTEGRATED OPTICS; SEMICONDUCTOR DEVICES AND MATERIALS; LASERS AND LASER APPLICATIONS; OPTOELECTRONICS;

D O I：

10.1049/el:19920361

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A simple, analytical formula is applied to investigate the thermal behaviour of planar vertical-cavity diode lasers emitting through the top surface in the substrate-down configuration. Individual emitters and large-size two-dimensional arrays are considered.

引用

收藏

页码：572 / 574

页数：3

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