THERMAL-PROPERTIES OF ETCHED-WELL SURFACE-EMITTING SEMICONDUCTOR-LASERS

被引:69
作者
NAKWASKI, W
OSINSKI, M
机构
[1] TECH UNIV LODZ, INST PHYS, PL-93005 LODZ, POLAND
[2] TECH UNIV LODZ, DEPT TECH PHYS & APPL MATH, PL-93005 LODZ, POLAND
[3] UNIV NEW MEXICO, DEPT PHYS & ASTRON, ALBUQUERQUE, NM 87131 USA
关键词
D O I
10.1109/3.89956
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A new comprehensive two-dimensional model for analysis of thermal effects in etched-well vertical-cavity surface-emitting lasers is presented. Self-consistency between electrical and thermal processes is achieved. Joule heating is shown to play a key role in thermal behavior of these devices. Substantial mismatch between current density and optical field profiles can be remedied by proper doping of top cladding layer. A simple way to control the sign and strength of thermal wave-guiding is suggested. Consequences for large-scale two-dimensional integration are indicated.
引用
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页码:1391 / 1401
页数:11
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