LOW THRESHOLD, HIGH-POWER, VERTICAL-CAVITY SURFACE-EMITTING LASERS

被引：44

作者：

GEELS, RS

COLDREN, LA

机构：

[1] Electrical and Computer Engineering Department, University of California, Santa Barbara

来源：

ELECTRONICS LETTERS | 1991年 / 27卷 / 21期

关键词：

SEMICONDUCTOR LASERS; LASERS;

D O I：

10.1049/el:19911229

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

By optimising mirror reflectivities, number of quantum wells, and miff or doping, record continuous wave (CW) output power levels and low threshold currents have been achieved. Broad area devices yielded > 12 mW CW and > 500 mW pulsed, 6-mu-m devices gave submilliampere threshold currents and output power > 1 mW and 10-mu-m devices showed output powers > 3 mW with a threshold of 1.5 mA.

引用

页码：1984 / 1985

页数：2

共 9 条

[1] LOW THRESHOLD PLANARIZED VERTICAL-CAVITY SURFACE-EMITTING LASERS
GEELS, RS
CORZINE, SW
SCOTT, JW
YOUNG, DB
COLDREN, LA
[J]. IEEE PHOTONICS TECHNOLOGY LETTERS, 1990, 2 (04) : 234 - 236
[2] SUBMILLIAMP THRESHOLD VERTICAL-CAVITY LASER-DIODES
GEELS, RS
COLDREN, LA
[J]. APPLIED PHYSICS LETTERS, 1990, 57 (16) : 1605 - 1607
[3] GEELS RS, 1991, IEEE J QUANTUM ELECT, V27
[4] TOP-SURFACE-EMITTING GAAS 4-QUANTUM-WELL LASERS EMITTING AT 0.85 MU-M
LEE, YH
TELL, B
BROWNGOEBELER, K
JEWELL, JL
HOVE, JV
[J]. ELECTRONICS LETTERS, 1990, 26 (11) : 710 - 711
[5] INGAAS-GAAS QUANTUM-WELL VERTICAL-CAVITY SURFACE-EMITTING LASER USING MOLECULAR-BEAM EPITAXIAL REGROWTH
LEI, C
ROGERS, TJ
DEPPE, DG
STREETMAN, BG
[J]. APPLIED PHYSICS LETTERS, 1991, 58 (11) : 1122 - 1124
[6] VERTICAL-CAVITY SURFACE-EMITTING INGAAS GAAS-LASERS WITH PLANAR LATERAL DEFINITION
ORENSTEIN, M
VONLEHMEN, AC
CHANGHASNAIN, C
STOFFEL, NG
HARBISON, JP
FLOREZ, LT
CLAUSEN, E
JEWELL, JE
[J]. APPLIED PHYSICS LETTERS, 1990, 56 (24) : 2384 - 2386
[7] 90-PERCENT COUPLING OF TOP SURFACE EMITTING GAAS/ALGAAS QUANTUM-WELL LASER OUTPUT INTO 8-MU-M DIAMETER CORE SILICA FIBER
TAI, K
HASNAIN, G
WYNN, JD
FISCHER, RJ
WANG, YH
WEIR, B
GAMELIN, J
CHO, AY
[J]. ELECTRONICS LETTERS, 1990, 26 (19) : 1628 - 1629
[8] HIGH-POWER CW VERTICAL-CAVITY TOP SURFACE-EMITTING GAAS QUANTUM-WELL LASERS
TELL, B
LEE, YH
BROWNGOEBELER, KF
JEWELL, JL
LEIBENGUTH, RE
ASOM, MT
LIVESCU, G
LUTHER, L
MATTERA, VD
[J]. APPLIED PHYSICS LETTERS, 1990, 57 (18) : 1855 - 1857
[9] LOW-THRESHOLD OPERATION OF A GAAS SINGLE QUANTUM-WELL MUSHROOM STRUCTURE SURFACE-EMITTING LASER
YANG, YJ
DZIURA, TG
FERNANDEZ, R
WANG, SC
DU, G
WANG, S
[J]. APPLIED PHYSICS LETTERS, 1991, 58 (16) : 1780 - 1782

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