LOW-THRESHOLD OPERATION OF A GAAS SINGLE QUANTUM-WELL MUSHROOM STRUCTURE SURFACE-EMITTING LASER

被引：9

作者：

YANG, YJ

DZIURA, TG

FERNANDEZ, R

WANG, SC

DU, G

WANG, S

机构：

[1] UNIV CALIF BERKELEY,DEPT ELECT ENGN & COMP SCI,BERKELEY,CA 94720

[2] UNIV CALIF BERKELEY,ELECTR RES LAB,BERKELEY,CA 94720

来源：

APPLIED PHYSICS LETTERS | 1991年 / 58卷 / 16期

关键词：

D O I：

10.1063/1.105089

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Room-temperature continuous-wave (cw) lasing operation with a threshold current (I(th)) of 3 mA and a pulsed I(th) as low as 1.5 mA were achieved in mushroom structure surface-emitting lasers utilizing a 300 angstrom GaAs single quantum well as an active layer and an AlAs/Al0.1Ga0.9As multilayer as the top and the bottom distributed Bragg reflectors. A series resistance of 250-OMEGA was obtained on devices with an 8 X 8-mu-m2 active region using selective zinc diffusion. A differential quantum efficiency of 12%-20% and a maximum cw light output power exceeding 1 mW were achieved. The emission wavelength was 860 nm with a spectral linewidth of approximately 0.5 angstrom.

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收藏

页码：1780 / 1782

页数：3

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