Influence of the growth conditions on the composition of Al nitride films by laser ablation

We have studied the growth of Al nitride films by laser ablation in order to check the potential of the method. The influence of process parameters such as nature of the tal-get, laser energy density, nitrogen partial pressure, etc, on the composition, chemical nature and structure of the films has been investigated. Rutherford backscattering spectrometry, nuclear reaction analysis, X-ray diffraction and X-ray photoelectron spectroscopy were used to characterize the films. Literature reports on AIN film growth by laser ablation but oxygen contamination is poorly discussed whereas it is the main problem encountered. The origin of this contamination and the mechanisms of incorporation were studied, and the crucial parameter was found to be the residual pressure during ablation. Due to the difference in chemical reactivity between oxygen and nitrogen atomic species, to obtain pure AIN films it is necessary to increase the concentration of atomic nitrogen. Thus, a RF discharge device was added allowing a better nitrogen molecule dissociation. Finally, despite composition deviations, the AIN phase can be formed in the laser-deposited films. Highly textured films presenting; epitaxial relationships with crystalline Al2O3 substrates can be grown even with a 10% oxygen concentration.