LASER-INDUCED MICROSTRUCTURAL CHANGES AND DECOMPOSITION OF ALUMINUM NITRIDE

The microstructural changes induced by pulsed laser irradiation in the surface layer of AIN and the initial stage of electroless copper deposition in laser processe specimens have been investigated using transmission electron microscopy (TEM). It was found that a dislocation microstructure is generated by laser processing at laser energy densities of 1.5 J/cm2 or higher. A very sharp change in the dislocation microstructure was seen at a depth of 0.2 to 0.3 mum from the free surface. The dislocation Burgers vector is <100> and the slip plane is {001}, in agreement with previous reports. AlN was melted and resolidified homo-epitactically from the solid substrate forming a mosaic microstructure with very fine cells having a misorientation of up to 15-degrees. Patches of metallic aluminum were found at the surface of all the specimens irradiated at a laser energy density of 1.5 J/cm2 or higher. Very fine particles of AlN, 20 to 50 nm in diameter, were randomly distributed inside the patches. Immersion of these specimens in an electroless copper bath showed that the electroless solution preferentially etched away aluminum at the Al-AlN interface. At the same time copper islands were deposited in cavities left by AlN particles as well as at the interface with the underlying substrate. These regions are the seeds for further electroless deposition. The TEM observations of laser-induced microstructural changes reported in this paper help to unravel further the mechanisms of adhesion enhancement and surface activation by pulsed laser irradiation.