Numerical modeling of a microwave plasma CVD reactor

被引：34

作者：

Gorbachev, AM ^{[1
]}

Koldanov, VA ^{[1
]}

Vikharev, AL ^{[1
]}

机构：

[1] Russian Acad Sci, Inst Appl Phys, Nizhnii Novgorod 603600, Russia

来源：

基金：

俄罗斯基础研究基金会;

关键词：

diamond growth and characterization; microwave CVD deposition; numerical modeling;

D O I：

10.1016/S0925-9635(00)00503-3

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This paper presents the results of numerical simulation of a microwave CVD reactor operating in CW and pulsed regimes. Dependencies of discharge parameters on the hydrogen pressure and microwave power have been studied. The possibility to use the pulse-periodic regime of discharge for deposition of diamond films has been analyzed. It is shown that a pulsed discharge may be used to improve the quality and increase the growth rate of the films. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：342 / 346

页数：5

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