SCALING LAWS FOR DIAMOND CHEMICAL-VAPOR-DEPOSITION .2. ATOMIC-HYDROGEN TRANSPORT

被引：86

作者：

GOODWIN, DG

机构：

[1] Division of Engineering and Applied Science, California Institute of Technology, Pasadena

来源：

JOURNAL OF APPLIED PHYSICS | 1993年 / 74卷 / 11期

关键词：

D O I：

10.1063/1.355064

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Scaling relations are developed to allow estimation of the atomic hydrogen concentration at the substrate during diamond chemical-vapor deposition for both diffusion-dominated and convection-dominated reactors. In the convection-dominated case, it is shown that there exists an optimal Mach number which maximizes the H concentration delivered to the substrate. In addition, when homogeneous recombination is taken into account, there exists an optimal operating pressure. This analysis shows that a sonic flow of highly dissociated hydrogen at a pressure near atmospheric is optimal for rapid growth of high-quality diamond.

引用

页码：6895 / 6906

页数：12

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