Thermoluminescence of ZnS nanoparticles

被引:153
作者
Chen, W
Wang, ZG
Lin, ZJ
Lin, LY
机构
[1] Lab. of Semiconduct. Mat. Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
关键词
D O I
10.1063/1.118563
中图分类号
O59 [应用物理学];
学科分类号
摘要
The thermoluminescence (TL) of ZnS nanoparticles is reported. The TL intensity increases as the particle size is decreased. The consistency of the size dependence of the TL with that of the surface fluorescence indicates that the TL may be related to the surface states. TL may be caused by the recombination of carriers released from the surface states or defect sites by heating. Smaller particles have higher surface/volume ratio and more surface states, therefore contain more accessible carriers for TL. Besides, the carrier recombination rate increases upon decreasing size due to the increase of the overlap between the electron and hole wave functions. These two effects may make the TL increase upon decreasing size of the particles. The appearance of TL prior to any radiation reveals that trapped carriers have pre-existed. The investigation of TL may provide some useful information about the surface states that may explain the size dependence of the surface fluorescence. (C) 1997 American Institute of Physics.
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页码:1465 / 1467
页数:3
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