Electrodeposition of CuInSe2 thin films

被引：2

作者：

Bouabid, K

Ihlal, A

Manar, A

Sdaq, A

Outzourhit, A

Ameziane, EL

机构：

[1] Univ Ibn Zohr, Fac Sci, Dept Phys, Equipe Phys Semicond, Agadir, Morocco

[2] Fac Sci Semlalia, Dept Phys, Lab Phys Solides & Couches Minces, Marrakech, Morocco

来源：

JOURNAL DE PHYSIQUE IV | 2005年 / 123卷

关键词：

D O I：

10.1051/jp4:2005123007

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

CuInSe2 thin films were prepared by one step electrodeposition from reagents CuSO4, In-2(SO4)(3), SeO2 and using citric acid as complexing agent. The influence of deposition parameters (electrolyte composition, concentration of reagent and deposition potential) on film composition was studied. The structure, composition, morphology and opto-electric properties of as deposited and of annealed films were investigated. The stoichiometric CuInSe2 were obtained at concentration of reagent: 3, 3 and 5mM respectively at potentials varying between -500 and -700 mV. The formation of chalcopyrite phase of CuInSe2 was confirmed by X-ray diffraction for samples annealed at temperature above 350 degrees C. The concentration of In-2(SO4)(3) affects the composition of In and Se in the films. Optical absorption studies indicate band gap values between 1.01 and 1. 10 eV. The electrical resistivity of the films at room temperature is in the order of 10 Omega cm.

引用

页码：47 / 51

页数：5

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