Spin-dependent tunneling through a symmetric semiconductor barrier

被引：205

作者：

Perel', VI ^{[1
]}

Tarasenko, SA

Yassievich, IN

Ganichev, SD

Bel'kov, VV

Prettl, W

机构：

[1] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

[2] Univ Regensburg, Fak Phys, D-93040 Regensburg, Germany

来源：

PHYSICAL REVIEW B | 2003年 / 67卷 / 20期

关键词：

D O I：

10.1103/PhysRevB.67.201304

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The problem of electron tunneling through a symmetric semiconductor barrier based on zinc-blende-structure material is studied. The k(3) Dresselhaus terms in the effective Hamiltonian of bulk semiconductor of the barrier are shown to result in a dependence of the tunneling transmission on the spin orientation. The difference of the transmission probabilities for opposite spin orientations can achieve several percents for the reasonable width of the barriers.

引用

页数：3

共 17 条

[1]

Awschalom DD, 2002, NANOSCI TECHNOL, P147

[2]

BYCHKOV YA, 1984, JETP LETT+, V39, P78

[3] SPIN-ORBIT COUPLING EFFECTS IN ZINC BLENDE STRUCTURES [J].

DRESSELHAUS, G .

PHYSICAL REVIEW, 1955, 100 (02) :580-586

[4] Spin-dependent current transmission across a ferromagnet-insulator-two-dimensional electron gas junction [J].

Hammar, PR ;

Johnson, M .

APPLIED PHYSICS LETTERS, 2001, 79 (16) :2591-2593

[5] Efficient electrical spin injection from a magnetic metal/tunnel barrier contact into a semiconductor [J].

Hanbicki, AT ;

Jonker, BT ;

Itskos, G ;

Kioseoglou, G ;

Petrou, A .

APPLIED PHYSICS LETTERS, 2002, 80 (07) :1240-1242

[6]

Ivchenko E. L., 1997, Superlattices and Other Heterostructures: Symmetry and Optical Phenomena

[7] Spin-filter device based on the Rashba effect using a nonmagnetic resonant tunneling diode [J].

Koga, T ;

Nitta, J ;

Takayanagi, H .

PHYSICAL REVIEW LETTERS, 2002, 88 (12) :4-126601

[8]

MOSTNYI VF, CONDMAT0110240

[9] Theory of electrical spin injection: Tunnel contacts as a solution of the conductivity mismatch problem [J].

Rashba, EI .

PHYSICAL REVIEW B, 2000, 62 (24) :R16267-R16270

[10] Fundamental obstacle for electrical spin injection from a ferromagnetic metal into a diffusive semiconductor [J].

Schmidt, G ;

Ferrand, D ;

Molenkamp, LW ;

Filip, AT ;

van Wees, BJ .

PHYSICAL REVIEW B, 2000, 62 (08) :R4790-R4793

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