Electrochemical doping in electrolyte-gated polymer transistors

被引：146

作者：

Yuen, Jonathan D.

Dhoot, Anoop S.

Namdas, Ebinazar B.

Coates, Nelson E.

Heeney, Martin

McCulloch, Iain

Moses, Daniel

Heeger, Alan J. ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, Ctr Polymers & Organ Solids, Santa Barbara, CA 93106 USA

[2] Queen Mary Univ London, Dept Mat, London E1 4NS, England

[3] Imperial Coll London, Dept Chem, London SW7 2AZ, England

来源：

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY | 2007年 / 129卷 / 46期

关键词：

D O I：

10.1021/ja0749845

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

By comparing the changes in pi-pi* absorption with the transconductance in PEO-LiClO4 electrolyte-gated FETs, we have demonstrated that the high channel currents obtained at low gate voltages result from reversible electrochemical doping of the semiconducting polymer film. At low temperatures, the conductivity of the electrochemically doped poly(2,5-bis(3-tetradecylthiophen-2-yl)thieno[3,2-b]thiophene), PBTTT-C14, is nonlinear with a crossover from d sigma(T)/dT > 0 to d sigma(T)/dT approximate to 0 as a function of the source-drain voltage. High current densities, up to 106 A/cm(2) at 4.2 K, can be sustained in the electrochemically doped PBTTT-C14 films.

引用

收藏

页码：14367 / 14371

页数：5

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