Giant stability enhancement of rare-earth implanted SiO2 light emitting devices by an additional SiON protection layer

被引：24

作者：

Sun, J. M. ^{[1
]}

Rebohle, L. ^{[1
]}

Prucnal, S. ^{[1
]}

Helm, M. ^{[1
]}

Skorupa, W. ^{[1
]}

机构：

[1] Forschungzentrum Dresden Rossendorf, Inst Ion Beam Phys & Mat Res, D-01314 Dresden, Germany

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 07期

关键词：

D O I：

10.1063/1.2870203

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The electrical stability of rare-earth implanted SiO2 light emitting devices was improved by using a SiON dielectric buffer layer in an indium tin oxide/SiON/SiO2:Tb/Si device structure. At the expense of a small increase of the electroluminescence threshold voltage, a large increase of the breakdown electric field from 7.5 to 10.5 MV/cm was obtained in the SiO2:Tb layer, and the maximum injection current density was increased by three orders of magnitude from 4 mA/cm(2) to 4 A/cm(2). The operation time of the electroluminescence devices was increased by more than three orders of magnitude at an injection current density of similar to 4 mA/cm(2). Our experimental results are consistent with a theoretical model proposed for designing a stable and efficient thin-film light emitting device containing double-stacked dielectric layers. (C) 2008 American Institute of Physics.

引用

页数：3

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