Material characteristics and applications of transparent amorphous oxide semiconductors

被引:893
作者
Kamiya, Toshio [1 ,2 ]
Hosono, Hideo [1 ,2 ,3 ]
机构
[1] Tokyo Inst Technol, Mat & Struct Lab, Midori Ku, Yokohama, Kanagawa 2268503, Japan
[2] Tokyo Inst Technol, Frontier Res Ctr, Midori Ku, Yokohama, Kanagawa 2268503, Japan
[3] Japan Sci & Technol Agcy, ERATO SORST, Kawaguchi, Saitama, Japan
关键词
THIN-FILM TRANSISTORS; AMOLED DISPLAY DRIVEN; HIGH-MOBILITY; ELECTRONIC-STRUCTURE; CARRIER TRANSPORT; CHANNEL LAYER; ZNO; CRYSTALLINE; FABRICATION; ORIGINS;
D O I
10.1038/asiamat.2010.5
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Transparent amorphous oxide semiconductors have unique electron transport properties, such as large electron mobility (10-5.0cm(2)/Vs) and the absence of a Hall voltage sign anomaly, that are not seen in conventional amorphous semiconductors. This class of materials has been attracting much attention as a channel layer in thin-film transistors (TFTs) utilizing the above features along with the processing advantage that thin films can be deposited at low temperatures by conventional sputtering methods. The primary driving force for this trend is a rapidly emerging demand for backplane TFTs that can drive the next generation of flat-panel displays. This article reviews the recent advances in fundamental science of these materials and their TFT applications. Emphasis is placed on the view that high ionicity in chemical bonding and large spherical spread of unoccupied metal s orbitals in p-block metal oxides lead to the realization of electronic structures that are advantageous for n-channel TFT applications. Amorphous oxide semiconductors are compared with conventional hydrogenated amorphous silicon, which is used widely as the channel material for backplane TFTs in current liquid-crystal displays.
引用
收藏
页码:15 / 22
页数:8
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