High-performance and electrically stable C60 organic field-effect transistors

被引：89

作者：

Zhang, X.-H. ^{[1
]}

Domercq, B. ^{[1
]}

Kippelen, B. ^{[1
]}

机构：

[1] Georgia Inst Technol, COPE, Sch Elect & Comp Engn, Atlanta, GA 30332 USA

来源：

APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 09期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.2778472

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The authors report on high-performance C-60 organic field-effect transistors fabricated by physical vapor deposition. Electron mobility ranging from 2.7 to 5.0 cm(2)/V s was achieved when treating the gate dielectric with divinyltetramethyldisiloxane bis(benzocyclobutene) and depositing C-60 at room temperature. The transistors combine threshold voltages near zero, low subthreshold slopes (< 0.7 V/decade), on/off current ratios larger than 10(6), excellent reproducibility, and good electrical stability under prolonged continuous dc bias stress.

引用

页数：3