Surface treatment of CuInGaSe2 thin films and its effect on the photovoltaic properties of solar cells

被引:69
作者
Ramanathan, K
Hasoon, FS
Smith, S
Young, DL
Contreras, MA
Johnson, PK
Pudov, AO
Sites, JR
机构
[1] Natl Renewable Energy Lab, Golden, CO 80401 USA
[2] Colorado State Univ, Dept Phys, Ft Collins, CO 80523 USA
关键词
thin films;
D O I
10.1016/S0022-3697(03)00169-0
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Solar cells have been fabricated with partial electrolyte treatments of CuInGaSe2- (CIGS) thin film absorbers in lieu of a CdS layer. Treatment of the absorbers in a Cd or Zn containing solution is shown to produce conditions under which efficient solar cells can be fabricated. A similar effect is also observed in CuInGaSSe2 (CIGSS) graded band gap absorbers. These observations can be explained by the ability of Cd and Zn to produce n-type doping or inversion in the surface region. We also provide a brief review of similar work done elsewhere and identify directions for future investigations. (C) 2003 Elsevier Ltd. All rights reserved.
引用
收藏
页码:1495 / 1498
页数:4
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