InP/InGaAs SHBTs with 75 nm collector and fT > 500 GHz

被引：48

作者：

Hafez, W ^{[1
]}

Lai, JW ^{[1
]}

Feng, M ^{[1
]}

机构：

[1] Univ Illinois, Dept Elect & Comp Engn, Urbana, IL 61801 USA

来源：

ELECTRONICS LETTERS | 2003年 / 39卷 / 20期

关键词：

D O I：

10.1049/el:20030951

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

InP/InGaAs single heterojunction bipolar transistors (SHBTs) are fabricated exhibiting current-gain cutoff frequencies, f(T) of 509 GHz. The 0.35 x 12 mum(2) devices consist of a 25 nm graded base and a 75 nm collector. have a breakdown BVCEO of 2.7 V, and operate at current densities above 1100 kA/cm(2). This work demonstrates clear progress toward a THz transistor.

引用

页码：1475 / 1476

页数：2

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InP/InGaAs SHBTs with 75 nm collector and fT &gt; 500 GHz

InP/InGaAs SHBTs with 75 nm collector and fT > 500 GHz