Ultrahigh performance staggered lineup ("Type-II") InP/GaAsSb/InP NpN double heterojunction bipolar transistors

被引：31

作者：

Bolognesi, CR ^{[1
]}

Dvorak, MW ^{[1
]}

Matine, N ^{[1
]}

Pitts, OJ ^{[1
]}

Watkins, SP ^{[1
]}

机构：

[1] Simon Fraser Univ, Sch Engn Sci, CSDL, Burnaby, BC V5A 1S6, Canada

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2002年 / 41卷 / 2B期

关键词：

DHBT; InP; GaAsSb; carbon doping; MOCVD; transistors; heterojunctions; cutoff frequency; OEICs;

D O I：

10.1143/JJAP.41.1131

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We study the performance of staggered lineup NpN InP/GaAsSb/InP abrupt double heterojunction bipolar transistors (DHBTs) intended for ultrahigh speed applications. With a peak f(T) of 305 GHz (and f(MAX) = 300 GHz), InP/GaAsSb/InP DHBTs are currently the fastest bipolar transistors ever implemented, and as such may challenge sub-100 nm gate InP HEMTs for > 40 Gb/s applications: previously published criteria suggest current device performance should be suitable for 80-100 Gb/s OEICs. InP/GaAsSb/InP DHBTs feature high breakdown voltages and low offset and knee voltages, and extremely high current drive levels enabled by the lack of collector current blocking at the staggered base/collector junction. InP/GaAsSb/InP DHBTs also feature important manufacturability advantages because the structure is entirely made up of uniform composition binary and ternary alloy layers.

引用

页码：1131 / 1135

页数：5

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