Composite step-graded collector of InP/InGaAs/InP DHBT for minimised carrier blocking

被引：20

作者：

Chor, EF

Peng, CJ

机构：

[1] National University of Singapore, Department of Electrical Engineering, Centre for Optoelectronics, Singapore 0511

来源：

ELECTRONICS LETTERS | 1996年 / 32卷 / 15期

关键词：

heterojunction bipolar transistors; semiconductor devices;

D O I：

10.1049/el:19960889

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A composite step-graded collector of InP/InGaAs/InP DHBT has been investigated for minimised carrier blocking. The optimised collector has the following sub-layers: a 100 Angstrom n InGaAs layer; three 200 Angstrom n InGaAsP layers; and a 100 Angstrom, n = 3 x 10(17) cm(-3) InP layer, and the rest are n InP. The InGaAsP layers should be chosen to give approximately equal band offset at the heterointerfaces.

引用

页码：1409 / 1410

页数：2

共 3 条

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