HIGH-GAIN, HIGH-SPEED INP/INGAAS DOUBLE-HETEROJUNCTION BIPOLAR-TRANSISTORS WITH A STEP-GRADED BASE-COLLECTOR HETEROJUNCTION

被引：22

作者：

WILLEN, B ^{[1
]}

WESTERGREN, U ^{[1
]}

ASONEN, H ^{[1
]}

机构：

[1] TAMPERE UNIV TECHNOL,DEPT PHYS,TAMPERE,FINLAND

来源：

IEEE ELECTRON DEVICE LETTERS | 1995年 / 16卷 / 11期

关键词：

D O I：

10.1109/55.468273

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We show that by using InP for the emitter and collector layers, and a thin high-doped base layer, it is possible to achieve bath a high de current gain and a high maximum frequency of oscillation, We have fabricated InP/InGaAs double heterojunction bipolar transistors (DHBT's) with cutoff frequencies f(T) and f(max) Of 92 and 95 GHz, respectively, with a de current gain of over 100. The maximum cutoff frequencies were 107 and 104 GHz.

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页码：479 / 481

页数：3

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