INP/INGAAS DOUBLE-HETEROJUNCTION BIPOLAR-TRANSISTORS INCORPORATING CARBON-DOPED BASES AND SUPERLATTICE GRADED BASE-COLLECTOR JUNCTIONS

被引：18

作者：

GEE, RC

LIN, CL

FARLEY, CW

SEABURY, CW

HIGGINS, JA

KIRCHNER, PD

WOODALL, JM

ASBECK, PM

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

[2] ROCKWELL INT CORP,CTR SCI,THOUSAND OAKS,CA 91360

来源：

ELECTRONICS LETTERS | 1993年 / 29卷 / 10期

关键词：

BIPOLAR DEVICES; TRANSISTORS; SEMICONDUCTOR DEVICES AND MATERIALS;

D O I：

10.1049/el:19930568

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High performance InP/InGaAs double heterojunction bipolar transistors (DHBTs) incorporating carbon-doped bases and graded base-collector junctions implemented using a short period superlattice were grown by gas source MBE (GSMBE). Base hole concentrations up to 1.6 x 10(19) cm-3 were obtained, using CCl4 as the dopant source. Transistors with 2 x 10 mum2 emitters achieved f(t) and f(max) values up to 76 and 82 GHz, respectively. These devices demonstrate state of the art values of f(max).

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页码：850 / 851

页数：2

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