INP/IN0.53GA0.47AS HETEROJUNCTION BIPOLAR-TRANSISTORS WITH A CARBON-DOPED BASE GROWN BY MOCVD

被引：22

作者：

HANSON, AW

STOCKMAN, SA

STILLMAN, GE

机构：

[1] Department of Electrical and Computer Engineering, University of Illinois, Urbana

来源：

IEEE ELECTRON DEVICE LETTERS | 1992年 / 13卷 / 10期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1109/55.192815

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

InP/In0.53Ga0.47As heterojunction bipolar transistors (HBT's) utilizing a carbon-doped base have been demonstrated. The devices were grown by low-pressure metalorganic chemical vapor deposition (LP-MOCVD) using carbon tetrachloride (CCl4) as the p-type dopant source. These devices exhibit a dc common-emitter current gain of 50 and an emitter-base junction ideality factor of 1.29 in a structure for which no undoped spacer layer was employed at the emitter-base junction. These preliminary results suggest that C-doping of In0.53Ga0.47As may be a suitable alternative to Zn in MOCVD-grown InP/In0.53Ga0.47 As HBTs.

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页码：504 / 506

页数：3

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