CARBON INCORPORATION IN MOMBE-GROWN GA0.47IN0.53AS

被引：49

作者：

KAMP, M ^{[1
]}

CONTINI, R ^{[1
]}

WERNER, K ^{[1
]}

HEINECKE, H ^{[1
]}

WEYERS, M ^{[1
]}

LUTH, H ^{[1
]}

BALK, P ^{[1
]}

机构：

[1] RHEIN WESTFAL TH AACHEN,INST PHYS,D-5100 AACHEN,FED REP GER

来源：

JOURNAL OF CRYSTAL GROWTH | 1989年 / 95卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(89)90371-0

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：154 / 157

页数：4

共 13 条

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[5]

KAMP M, IN PRESS

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[7] A COMPARATIVE-STUDY OF GA(CH3)3 AND GA(C2H5)3 IN THE MOMBE OF GAAS [J].

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[8] STABILIZATION OF INP SUBSTRATE UNDER ANNEALING IN THE PRESENCE OF GAAS [J].

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[9] HIGH-TRANSCONDUCTANCE HETEROSTRUCTURE GA0.47IN0.53AS/INP METAL-INSULATOR-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS GROWN BY CHEMICAL BEAM EPITAXY [J].

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[10] GALNASP/INP DOUBLE HETEROSTRUCTURE LASERS EMITTING AT 1.5-MU-M GROWN BY CHEMICAL BEAM EPITAXY [J].

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