GALNASP/INP DOUBLE HETEROSTRUCTURE LASERS EMITTING AT 1.5-MU-M GROWN BY CHEMICAL BEAM EPITAXY

被引：20

作者：

TSANG, WT

机构：

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D O I：

10.1063/1.97873

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：63 / 65

页数：3

共 15 条

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[8] Suematsu Y., 1982, GaInAsP alloy semiconductors, P341
[9] 1.3-MU-M WAVELENGTH GAINASP INP DOUBLE HETEROSTRUCTURE LASERS GROWN BY MOLECULAR-BEAM EPITAXY
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[J]. APPLIED PHYSICS LETTERS, 1982, 41 (11) : 1094 - 1096
[10] CHEMICAL BEAM EPITAXY OF INP AND GAAS
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[J]. APPLIED PHYSICS LETTERS, 1984, 45 (11) : 1234 - 1236