STABILIZATION OF INP SUBSTRATE UNDER ANNEALING IN THE PRESENCE OF GAAS

被引：7

作者：

SACILOTTI, M

MASUT, RA

ROTH, AP

机构：

[1] Natl Research Council of Canada,, Ottawa, Ont, Can, Natl Research Council of Canada, Ottawa, Ont, Can

来源：

APPLIED PHYSICS LETTERS | 1986年 / 48卷 / 07期

关键词：

HEAT TREATMENT - Annealing;

D O I：

10.1063/1.96536

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the annealing of InP and GaAs substrates, placed side by side, in a hydrogen atmosphere. This annealing is done with and without arsine, and also in the presence of elemental arsenic replacing GaAs. This simple technique shows the stabilization of InP by the presence of GaAs in a temperature range between 550 and 750 degree C. It gives information about active species present during substrate annealing. The results obtained show that the protecting species of column V elements, dimers or tetramers, behave differently than the ones resulting from the decomposition of the V hydride.

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页码：481 / 483

页数：3

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