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CHARACTERIZATION OF GAXIN1-XAS GROWN WITH TMIN
被引:34
作者
:
KUO, CP
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV UTAH,DEPT ELECT ENGN,SALT LAKE CITY,UT 84112
UNIV UTAH,DEPT ELECT ENGN,SALT LAKE CITY,UT 84112
KUO, CP
[
1
]
COHEN, RM
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV UTAH,DEPT ELECT ENGN,SALT LAKE CITY,UT 84112
UNIV UTAH,DEPT ELECT ENGN,SALT LAKE CITY,UT 84112
COHEN, RM
[
1
]
FRY, KL
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV UTAH,DEPT ELECT ENGN,SALT LAKE CITY,UT 84112
UNIV UTAH,DEPT ELECT ENGN,SALT LAKE CITY,UT 84112
FRY, KL
[
1
]
STRINGFELLOW, GB
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV UTAH,DEPT ELECT ENGN,SALT LAKE CITY,UT 84112
UNIV UTAH,DEPT ELECT ENGN,SALT LAKE CITY,UT 84112
STRINGFELLOW, GB
[
1
]
机构
:
[1]
UNIV UTAH,DEPT ELECT ENGN,SALT LAKE CITY,UT 84112
来源
:
JOURNAL OF ELECTRONIC MATERIALS
|
1985年
/ 14卷
/ 03期
关键词
:
D O I
:
10.1007/BF02661220
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
引用
收藏
页码:231 / 244
页数:14
相关论文
共 20 条
[1]
SATURATION VELOCITY DETERMINATION FOR IN0.53GA0.47AS FIELD-EFFECT TRANSISTORS
BANDY, S
论文数:
0
引用数:
0
h-index:
0
BANDY, S
NISHIMOTO, C
论文数:
0
引用数:
0
h-index:
0
NISHIMOTO, C
HYDER, S
论文数:
0
引用数:
0
h-index:
0
HYDER, S
HOOPER, C
论文数:
0
引用数:
0
h-index:
0
HOOPER, C
[J].
APPLIED PHYSICS LETTERS,
1981,
38
(10)
: 817
-
819
[2]
LIQUID-PHASE EPITAXIAL-GROWTH OF HIGH-PURITY GA1-XALXAS
CHANDRA, A
论文数:
0
引用数:
0
h-index:
0
CHANDRA, A
EASTMAN, LF
论文数:
0
引用数:
0
h-index:
0
EASTMAN, LF
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1980,
127
(01)
: 211
-
216
[3]
ELJANI B, 1982, J PHYSIQUE C, V5, P303
[4]
FRY K, UNPUB APPL PHYS LETT
[5]
OPTICAL AND CRYSTALLOGRAPHIC PROPERTIES AND IMPURITY INCORPORATION OF GAXIN1-XAS (0.44 LESS-THAN X LESS-THAN 0.49) GROWN BY LIQUID-PHASE EPITAXY, VAPOR-PHASE EPITAXY, AND METAL ORGANIC-CHEMICAL VAPOR-DEPOSITION
GOETZ, KH
论文数:
0
引用数:
0
h-index:
0
机构:
TECH UNIV BERLIN,INST FESTKORPERFORSCH,D-1000 BERLIN 12,FED REP GER
GOETZ, KH
BIMBERG, D
论文数:
0
引用数:
0
h-index:
0
机构:
TECH UNIV BERLIN,INST FESTKORPERFORSCH,D-1000 BERLIN 12,FED REP GER
BIMBERG, D
JURGENSEN, H
论文数:
0
引用数:
0
h-index:
0
机构:
TECH UNIV BERLIN,INST FESTKORPERFORSCH,D-1000 BERLIN 12,FED REP GER
JURGENSEN, H
SELDERS, J
论文数:
0
引用数:
0
h-index:
0
机构:
TECH UNIV BERLIN,INST FESTKORPERFORSCH,D-1000 BERLIN 12,FED REP GER
SELDERS, J
SOLOMONOV, AV
论文数:
0
引用数:
0
h-index:
0
机构:
TECH UNIV BERLIN,INST FESTKORPERFORSCH,D-1000 BERLIN 12,FED REP GER
SOLOMONOV, AV
GLINSKII, GF
论文数:
0
引用数:
0
h-index:
0
机构:
TECH UNIV BERLIN,INST FESTKORPERFORSCH,D-1000 BERLIN 12,FED REP GER
GLINSKII, GF
RAZEGHI, M
论文数:
0
引用数:
0
h-index:
0
机构:
TECH UNIV BERLIN,INST FESTKORPERFORSCH,D-1000 BERLIN 12,FED REP GER
RAZEGHI, M
[J].
JOURNAL OF APPLIED PHYSICS,
1983,
54
(08)
: 4543
-
4552
[6]
HAGAI H, 1976, APPL PHYS LETT, V29, P740
[7]
OMVPE GROWTH OF GAINP
HSU, CC
论文数:
0
引用数:
0
h-index:
0
HSU, CC
COHEN, RM
论文数:
0
引用数:
0
h-index:
0
COHEN, RM
STRINGFELLOW, GB
论文数:
0
引用数:
0
h-index:
0
STRINGFELLOW, GB
[J].
JOURNAL OF CRYSTAL GROWTH,
1983,
62
(03)
: 648
-
650
[8]
KRAUTLE H, 1974, J ELECTROCHEM SOC, V121, P1650
[9]
ORGANOMETALLIC VAPOR-PHASE EPITAXIAL-GROWTH OF HIGH-PURITY GAINAS USING TRIMETHYLINDIUM
KUO, CP
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV UTAH,DEPT ELECT ENGN,SALT LAKE CITY,UT 84112
UNIV UTAH,DEPT ELECT ENGN,SALT LAKE CITY,UT 84112
KUO, CP
YUAN, JS
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV UTAH,DEPT ELECT ENGN,SALT LAKE CITY,UT 84112
UNIV UTAH,DEPT ELECT ENGN,SALT LAKE CITY,UT 84112
YUAN, JS
COHEN, RM
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV UTAH,DEPT ELECT ENGN,SALT LAKE CITY,UT 84112
UNIV UTAH,DEPT ELECT ENGN,SALT LAKE CITY,UT 84112
COHEN, RM
DUNN, J
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV UTAH,DEPT ELECT ENGN,SALT LAKE CITY,UT 84112
UNIV UTAH,DEPT ELECT ENGN,SALT LAKE CITY,UT 84112
DUNN, J
STRINGFELLOW, GB
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV UTAH,DEPT ELECT ENGN,SALT LAKE CITY,UT 84112
UNIV UTAH,DEPT ELECT ENGN,SALT LAKE CITY,UT 84112
STRINGFELLOW, GB
[J].
APPLIED PHYSICS LETTERS,
1984,
44
(05)
: 550
-
552
[10]
OMVPE GROWTH OF GAINAS
KUO, CP
论文数:
0
引用数:
0
h-index:
0
KUO, CP
COHEN, RM
论文数:
0
引用数:
0
h-index:
0
COHEN, RM
STRINGFELLOW, GB
论文数:
0
引用数:
0
h-index:
0
STRINGFELLOW, GB
[J].
JOURNAL OF CRYSTAL GROWTH,
1983,
64
(03)
: 461
-
470
←
1
2
→
共 20 条
[1]
SATURATION VELOCITY DETERMINATION FOR IN0.53GA0.47AS FIELD-EFFECT TRANSISTORS
BANDY, S
论文数:
0
引用数:
0
h-index:
0
BANDY, S
NISHIMOTO, C
论文数:
0
引用数:
0
h-index:
0
NISHIMOTO, C
HYDER, S
论文数:
0
引用数:
0
h-index:
0
HYDER, S
HOOPER, C
论文数:
0
引用数:
0
h-index:
0
HOOPER, C
[J].
APPLIED PHYSICS LETTERS,
1981,
38
(10)
: 817
-
819
[2]
LIQUID-PHASE EPITAXIAL-GROWTH OF HIGH-PURITY GA1-XALXAS
CHANDRA, A
论文数:
0
引用数:
0
h-index:
0
CHANDRA, A
EASTMAN, LF
论文数:
0
引用数:
0
h-index:
0
EASTMAN, LF
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1980,
127
(01)
: 211
-
216
[3]
ELJANI B, 1982, J PHYSIQUE C, V5, P303
[4]
FRY K, UNPUB APPL PHYS LETT
[5]
OPTICAL AND CRYSTALLOGRAPHIC PROPERTIES AND IMPURITY INCORPORATION OF GAXIN1-XAS (0.44 LESS-THAN X LESS-THAN 0.49) GROWN BY LIQUID-PHASE EPITAXY, VAPOR-PHASE EPITAXY, AND METAL ORGANIC-CHEMICAL VAPOR-DEPOSITION
GOETZ, KH
论文数:
0
引用数:
0
h-index:
0
机构:
TECH UNIV BERLIN,INST FESTKORPERFORSCH,D-1000 BERLIN 12,FED REP GER
GOETZ, KH
BIMBERG, D
论文数:
0
引用数:
0
h-index:
0
机构:
TECH UNIV BERLIN,INST FESTKORPERFORSCH,D-1000 BERLIN 12,FED REP GER
BIMBERG, D
JURGENSEN, H
论文数:
0
引用数:
0
h-index:
0
机构:
TECH UNIV BERLIN,INST FESTKORPERFORSCH,D-1000 BERLIN 12,FED REP GER
JURGENSEN, H
SELDERS, J
论文数:
0
引用数:
0
h-index:
0
机构:
TECH UNIV BERLIN,INST FESTKORPERFORSCH,D-1000 BERLIN 12,FED REP GER
SELDERS, J
SOLOMONOV, AV
论文数:
0
引用数:
0
h-index:
0
机构:
TECH UNIV BERLIN,INST FESTKORPERFORSCH,D-1000 BERLIN 12,FED REP GER
SOLOMONOV, AV
GLINSKII, GF
论文数:
0
引用数:
0
h-index:
0
机构:
TECH UNIV BERLIN,INST FESTKORPERFORSCH,D-1000 BERLIN 12,FED REP GER
GLINSKII, GF
RAZEGHI, M
论文数:
0
引用数:
0
h-index:
0
机构:
TECH UNIV BERLIN,INST FESTKORPERFORSCH,D-1000 BERLIN 12,FED REP GER
RAZEGHI, M
[J].
JOURNAL OF APPLIED PHYSICS,
1983,
54
(08)
: 4543
-
4552
[6]
HAGAI H, 1976, APPL PHYS LETT, V29, P740
[7]
OMVPE GROWTH OF GAINP
HSU, CC
论文数:
0
引用数:
0
h-index:
0
HSU, CC
COHEN, RM
论文数:
0
引用数:
0
h-index:
0
COHEN, RM
STRINGFELLOW, GB
论文数:
0
引用数:
0
h-index:
0
STRINGFELLOW, GB
[J].
JOURNAL OF CRYSTAL GROWTH,
1983,
62
(03)
: 648
-
650
[8]
KRAUTLE H, 1974, J ELECTROCHEM SOC, V121, P1650
[9]
ORGANOMETALLIC VAPOR-PHASE EPITAXIAL-GROWTH OF HIGH-PURITY GAINAS USING TRIMETHYLINDIUM
KUO, CP
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV UTAH,DEPT ELECT ENGN,SALT LAKE CITY,UT 84112
UNIV UTAH,DEPT ELECT ENGN,SALT LAKE CITY,UT 84112
KUO, CP
YUAN, JS
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV UTAH,DEPT ELECT ENGN,SALT LAKE CITY,UT 84112
UNIV UTAH,DEPT ELECT ENGN,SALT LAKE CITY,UT 84112
YUAN, JS
COHEN, RM
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV UTAH,DEPT ELECT ENGN,SALT LAKE CITY,UT 84112
UNIV UTAH,DEPT ELECT ENGN,SALT LAKE CITY,UT 84112
COHEN, RM
DUNN, J
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV UTAH,DEPT ELECT ENGN,SALT LAKE CITY,UT 84112
UNIV UTAH,DEPT ELECT ENGN,SALT LAKE CITY,UT 84112
DUNN, J
STRINGFELLOW, GB
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV UTAH,DEPT ELECT ENGN,SALT LAKE CITY,UT 84112
UNIV UTAH,DEPT ELECT ENGN,SALT LAKE CITY,UT 84112
STRINGFELLOW, GB
[J].
APPLIED PHYSICS LETTERS,
1984,
44
(05)
: 550
-
552
[10]
OMVPE GROWTH OF GAINAS
KUO, CP
论文数:
0
引用数:
0
h-index:
0
KUO, CP
COHEN, RM
论文数:
0
引用数:
0
h-index:
0
COHEN, RM
STRINGFELLOW, GB
论文数:
0
引用数:
0
h-index:
0
STRINGFELLOW, GB
[J].
JOURNAL OF CRYSTAL GROWTH,
1983,
64
(03)
: 461
-
470
←
1
2
→