ANISOTROPIC PHENOMENA IN GAAS GROWTH-PROCESSES IN VAPOR-DEPOSITION SYSTEMS

被引：8

作者：

LAVRENTIEVA, LG

机构：

来源：

THIN SOLID FILMS | 1980年 / 66卷 / 01期

关键词：

D O I：

10.1016/0040-6090(80)90073-5

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：71 / 84

页数：14

共 44 条

[1]

ALEKSANDROV LN, 1972, KRISTALLOGRAFIYA, V17, P1030

[2] NUCLEATION OF EPITAXIAL FILMS AT CHEMICAL GROWTH [J].

ALEXANDROV, LN ;

SIDOROV, YG ;

KRIVOROT.EA .

THIN SOLID FILMS, 1969, 3 (06) :395-+

[3]

BLAKESLEE AE, 1969, T METALL SOC AIME, V245, P577

[4] THEORETICAL TREATMENT OF GAAS GROWTH BY VAPOR-PHASE TRANSPORT FOR (001) ORIENTATION [J].

CADORET, R ;

CADORET, M .

JOURNAL OF CRYSTAL GROWTH, 1975, 31 (DEC) :142-146

[5] GAAS GROWTH BY VAPOR-PHASE TRANSPORT .2. INTERPRETATION OF GROWTH OF (001) FACES BY ADSORPTION OF GALLIUM MONOCHLORIDE AND ARSENIC MOLECULES [J].

CADORET, R ;

HOLLAN, L ;

LOYAU, JB ;

OBERLIN, M ;

OBERLIN, A .

JOURNAL OF CRYSTAL GROWTH, 1975, 29 (02) :187-194

[6] THEORETICAL-ANALYSIS OF EQUILIBRIUM ADSORPTION LAYERS IN CVD SYSTEMS (SI-H-CL, GA-AS-H-CL) [J].

CHERNOV, AA ;

RUSAIKIN, MP .

JOURNAL OF CRYSTAL GROWTH, 1978, 45 (01) :73-81

[7]

CHERNOV AA, 1977, KRISTALLOGRAFIYA+, V22, P248

[8] GROWTH KINETICS AND CAPTURE OF IMPURITIES DURING GAS-PHASE CRYSTALLIZATION [J].

CHERNOV, AA .

JOURNAL OF CRYSTAL GROWTH, 1977, 42 (DEC) :55-76

[9]

CHERNOV AA, 1978, 5 S PROTS ROST SINT, P26

[10]

CHERNOV AA, 1978, J JAPAN ASS CRYSTAL, V5, P227

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