NUCLEATION OF EPITAXIAL FILMS AT CHEMICAL GROWTH

被引：9

作者：

ALEXANDROV, LN

SIDOROV, YG

KRIVOROT.EA

机构：

[1] Institute of Semiconductor Physics, Siberian Branch, Academy of Sciences, Novosibirsk

来源：

THIN SOLID FILMS | 1969年 / 3卷 / 06期

关键词：

D O I：

10.1016/0040-6090(69)90055-8

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A theoretical analysis and an experimental investigation of nucleating epitaxial Ge and GaAs films under chemical transport conditions at homoepitaxy were made. Estimation of nucleation rate was made taking into account the differences of temperature between the source and deposition zones, substrate orientation and its surface state. Investigation of crystallite nucleation and growth was carried out by electron-microscope replica method for deposition time from 5 sec up to 1 hour. The nucleus distribution curves of size and changes of nucleus density and size with time were obtained. The initial stage of deposition of GaAs occurs by forming three-dimensional nuclei and their growth occurs at constant rate. Nucleation rate defines the film perfection and its minimal thickness. The change of the nucleus form with time is observed and the role of the diffusion process is discussed. © 1969.

引用

页码：395 / +

页数：1

共 14 条

[1]

ALEKSANDROV LN, 1968, T K VICHISLIT SISTEM, P207

[2]

ALEKSANDROV LN, 1962, SOV PHYS USP, V4, P706

[3]

ALEKSANDROV LN, 1968, 2 P COLL THIN FILMS, P207

[4]

ALEKSANDROV LN, 1969, IZV AS USSR IM, V5, P450

[5]

ALEXANDROV LN, 1968, PROCESSI ROSTA STRUC, P15

[6] ROLE OF SURFACE DIFFUSION IN HETEROGENEOUS NUCLEATION MECHANISMS [J].

GRETZ, RD .

SURFACE SCIENCE, 1967, 6 (04) :468-&

[7] A STUDY OF NUCLEATION IN CHEMICALLY GROWN EPITAXIAL SILICON FILMS USING MOLECULAR BEAM TECHNIQUES .3. NUCLEATION RATE MEASUREMENTS AND EFFECT OF OXYGEN ON INITIAL GROWTH BEHAVIOUR [J].

JOYCE, BA ;

BRADLEY, RR ;

BOOKER, GR .

PHILOSOPHICAL MAGAZINE, 1967, 15 (138) :1167-&

[8]

KRIVOROTOV EA, 1969, IAN SSSR NEORG MATER, V5, P287

[9] NUCLEATION AND INITIAL-GROWTH BEHAVIOR OF THIN-FILM DEPOSITS [J].

LEWIS, B ;

CAMPBELL, DS .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1967, 4 (05) :209-&

[10]

Lewis B., 1967, THIN SOLID FILMS, V1, P85, DOI 10.1016/0040-6090(67)

← 1 2 →