INP/INGAAS DOUBLE-HETEROJUNCTION BIPOLAR-TRANSISTORS WITH HIGH-SPEED, GAIN AND CURRENT-DRIVING CAPABILITY

被引：2

作者：

PARRILLA, ML ^{[1
]}

NEWSON, DJ ^{[1
]}

QUAYLE, JA ^{[1
]}

MACBEAN, MDA ^{[1
]}

SKELLERN, DJ ^{[1
]}

机构：

[1] BRITISH TELECOMMUN PLC,IPSWICH IP5 7RE,SUFFOLK,ENGLAND

来源：

ELECTRONICS LETTERS | 1992年 / 28卷 / 01期

关键词：

SEMICONDUCTOR DEVICES AND MATERIALS; BIPOLAR DEVICES; TRANSISTORS;

D O I：

10.1049/el:19920052

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

InP/InGaAs double-heterojunction bipolar transistors (DHBTs) have been fabricated with an emitter area of 9 x 9-mu-m2 using a nonselfaligned process. Small-signal current gain in excess of 400 was obtained. Device measurements given an f(t) = 39 GHz which, to the authors' knowledge, is the highest value reported for an InP/InGaAs DHBT. The value of f(t) is in excess of 30 GHz for a range of current densities from 8 to 100 kA cm-2.

引用

页码：85 / 86

页数：2

共 4 条

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