Growth and hydrogen uptake of Mg-Y thin films -: art. no. 104903

被引:18
作者
Chacon, C
Johansson, E
Hjörvarsson, B
Zlotea, C
Andersson, Y
机构
[1] Uppsala Univ, Dept Phys, S-75121 Uppsala, Sweden
[2] Uppsala Univ, Dept Chem Mat, S-75121 Uppsala, Sweden
关键词
D O I
10.1063/1.1896440
中图分类号
O59 [应用物理学];
学科分类号
摘要
Wedged Mg-Y films with compositions ranging from pure Mg to Mg0.83Y0.17 were grown by dc-magnetron sputtering and hydrogenated. Mgl-xYx forms a substitutional alloy, ranging from 0 to at least 17 at. % in thin films. The c lattice parameter of the film containing 17 at. % of yttrium is determined to be approximatively 1% larger than in pure Mg. Upon exposure to 1 bar of hydrogen at 300 K, the samples switch from shiny metals to colorless semiconductor. Different characteristic hydrogen depth distributions are found for different Y concentrations. At low yttrium contents, a large concentration gradient is observed, with the highest hydrogen concentration close to the Pd/Mg1-xYx interface. For yttrium concentrations larger than 7 at. %, the obtained hydrogen distribution is almost independent of depth. The optical band gap is determined to be 3.6 eV, for all the Y concentrations. The optical transmission is found to decrease for increasing Y content, which is associated with an incomplete hydride formation in the films. (c) 2005 American Institute of Physics.
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页数:7
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