The properties of cadmium tin oxide thin-film compounds prepared by linear combinatorial synthesis

被引:42
作者
Li, XA [1 ]
Gessert, TA [1 ]
Coutts, T [1 ]
机构
[1] Natl Renewable Energy Lab, Golden, CO 80401 USA
关键词
thin film; transparent conducting oxides; cadmium tin oxide; MOCVD; linear combinatorial synthesis; material properties;
D O I
10.1016/S0169-4332(03)00909-7
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
SnO2 and CdO films with high electrical and optical quality have been produced by using low-pressure metal-organic chemical vapor deposition. Based on the knowledge gained from binary oxide formation, linear combinatorial synthesis is used to study the ternary oxide (Cd-Sn-O) compound. Compositional, structural, electrical, and optical properties of the films are found to vary along the reactant gas flow direction. The crystal structure indicates that the CdO-like films are formed near the location of gas injection and SnO2-like films near the end of the deposition zone. As composition and structure change, the carrier concentration varies around 10(20) cm(-3), and the mobility increases from less than 1 to similar to60 cm(2) V-1 s(-1). The optical bandgap of the films also increases from similar to2.75 to 3.65 eV as composition moves from CdO-Iike films to SnO2-like films. (C) 2003 Published by Elsevier B.V.
引用
收藏
页码:138 / 143
页数:6
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