The properties of cadmium tin oxide thin-film compounds prepared by linear combinatorial synthesis

被引：42

作者：

Li, XA ^{[1
]}

Gessert, TA ^{[1
]}

Coutts, T ^{[1
]}

机构：

[1] Natl Renewable Energy Lab, Golden, CO 80401 USA

来源：

APPLIED SURFACE SCIENCE | 2004年 / 223卷 / 1-3期

关键词：

thin film; transparent conducting oxides; cadmium tin oxide; MOCVD; linear combinatorial synthesis; material properties;

D O I：

10.1016/S0169-4332(03)00909-7

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

SnO2 and CdO films with high electrical and optical quality have been produced by using low-pressure metal-organic chemical vapor deposition. Based on the knowledge gained from binary oxide formation, linear combinatorial synthesis is used to study the ternary oxide (Cd-Sn-O) compound. Compositional, structural, electrical, and optical properties of the films are found to vary along the reactant gas flow direction. The crystal structure indicates that the CdO-like films are formed near the location of gas injection and SnO2-like films near the end of the deposition zone. As composition and structure change, the carrier concentration varies around 10(20) cm(-3), and the mobility increases from less than 1 to similar to60 cm(2) V-1 s(-1). The optical bandgap of the films also increases from similar to2.75 to 3.65 eV as composition moves from CdO-Iike films to SnO2-like films. (C) 2003 Published by Elsevier B.V.

引用

页码：138 / 143

页数：6

共 19 条

[11] Spray Deposition of Cadmium Stannate Films
Haacke, G.
Ando, H.
Mealmaker, W. E.
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (12) : 1923 - 1926
[12] HILL RJ, COATED GLASS APPL MA
[13] Deinstitutionalization at the beginning of the new millennium
Lamb, HR
[J]. HARVARD REVIEW OF PSYCHIATRY, 1998, 6 (01) : 1 - 10
[14] Applications and processing of transparent conducting oxides
Lewis, BG
Paine, DC
[J]. MRS BULLETIN, 2000, 25 (08) : 22 - 27
[15] Properties of CdO thin films produced by chemical vapor deposition
Li, X
Young, DL
Moutinho, H
Yan, Y
Narayanswamy, C
Gessert, TA
Coutts, TJ
[J]. ELECTROCHEMICAL AND SOLID STATE LETTERS, 2001, 4 (06) : C43 - C46
[16] High mobility CdO films and their dependence on structure
Li, X
Yan, Y
Mason, A
Gessert, TA
Coutts, TJ
[J]. ELECTROCHEMICAL AND SOLID STATE LETTERS, 2001, 4 (09) : C66 - C68
[17] OPTICAL AND ELECTRICAL PROPERTIES OF CD2SNO4 - A DEFECT SEMICONDUCTOR
NOZIK, AJ
[J]. PHYSICAL REVIEW B, 1972, 6 (02): : 453 - &
[18] DEPOSITION AND PROPERTIES OF CADMIUM-OXIDE FILMS BY ACTIVATED REACTIVE EVAPORATION
PHATAK, G
LAL, R
[J]. THIN SOLID FILMS, 1994, 245 (1-2) : 17 - 26
[19] Preparation and characterization of CdO films deposited by dc magnetron reactive sputtering
Subramanyam, TK
Uthanna, S
Naidu, BS
[J]. MATERIALS LETTERS, 1998, 35 (3-4) : 214 - 220

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