Preparation of Co-Cr films for perpendicular recording by sputter deposition at extremely high Ar pressures

被引：4

作者：

Honda, N ^{[1
]}

Ariake, J ^{[1
]}

Ouchi, K ^{[1
]}

Iwasaki, S ^{[1
]}

机构：

[1] TOHOKU INST TECHNOL,SENDAI,MIYAGI 982,JAPAN

来源：

JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS | 1996年 / 155卷 / 1-3期

关键词：

D O I：

10.1016/0304-8853(95)00725-3

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

High Ar pressure sputtering which enabled the deposition of Co-Cr films with high coercivity at room temperature, has been extended to high substrate temperature deposition. Co-Cr films deposited at a high temperature of 250 degrees C exhibit higher perpendicular coercivity and larger perpendicular anisotropy than those of room-temperature deposited films due to a magnetically isolated columnar structure. The origin of the magnetic isolation of grains can be explained by Cr micro-segregation not within grains but at the grain boundaries.

引用

页码：154 / 156

页数：3

共 7 条

[1] HIGH COERCIVITY IN CO-CR FILMS FOR PERPENDICULAR RECORDING PREPARED BY LOW-TEMPERATURE SPUTTER-DEPOSITION [J].