Carrier trapping and efficient recombination of electrophosphorescent device with stepwise doping profile

被引:86
作者
Chin, BD [1 ]
Suh, MC
Kim, MH
Lee, ST
Kim, HD
Chung, HK
机构
[1] Korea Inst Sci & Technol, Optoelect Mat Res Ctr, Seoul 130650, South Korea
[2] Samsung SDI Co Ltd, Ctr Corp Res & Dev, Yongin 449902, Gyeonggi Do, South Korea
关键词
D O I
10.1063/1.1894596
中图分类号
O59 [应用物理学];
学科分类号
摘要
We have presented a physical concept for enhancing efficiency and lifetime of doped electrophosphorescent organic light-emitting devices. In order to provide a control parameter for higher device performance, a stepwise doping concentration profile at the emission layer was prepared. A more than 30% improvement of power efficiency was obtained for green electrophosphorescent device with a higher doping ratio at the emission layer-hole transport layer interface. We explained the carrier trapping and transport mechanism with direct recombination of an exciton in an iridium-based dopant system. When compared to green device, phosphorescent red devices showed a more significant charge trapping effect at low doping concentration, which is responsible for shifting the recombination zone far from the emission layer-hole transport layer interface. Therefore, charge trapping by doping control in an emission layer could be utilized for a charge-balancing technique for the confinement of a triplet exciton. (C) 2005 American Institute of Physics.
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页码:1 / 3
页数:3
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