Preparation and characterization of nanostructured film of graphitized diamond crystallites for field electron emission

被引:7
作者
Chen, J
Deng, SZ
Chen, J
She, JC
Xu, NS [1 ]
机构
[1] Sun Yat Sen Zhongshan Univ, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Peoples R China
[2] Sun Yat Sen Zhongshan Univ, Guangdong Prov Key Lab Display Mat & Technol, Guangzhou 510275, Peoples R China
关键词
D O I
10.1063/1.1611281
中图分类号
O59 [应用物理学];
学科分类号
摘要
The details are given of the preparation technique that has been developed for depositing crystalline-nanodiamond particles on large-area silicon substrates, based on an dielectrophoresis process. A patented technique was adapted to prepare the substrate surface with high density of uniformly distributed nanoprotrusions that provide local field enhancement necessary for dielectrophoresis deposition. The nanodiamond crystallites were treated at elevated temperatures to have their surfaces graphitized. High-resolution transmission microscopy and electron diffraction techniques as well as micro Raman analysis were used to study the properties of the so-prepared nanostructured film. Stable field electron emission from these films with current density of >5 mA/cm(2) may be regularly obtained at fields as low as similar to3 V/mum. The current-voltage characteristics and the corresponding Fowler-Nordheim plots, emission uniformity, and current stability were studied. The findings suggest that this type of film is a potential candidate as a large-area cold cathode. A model based on emission associated nanoscale graphite network and nanotriple junction is presented. (C) 2003 American Institute of Physics.
引用
收藏
页码:5429 / 5431
页数:3
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