Constant threshold resistivity in the metal-insulator transition of VO2

被引：47

作者：

Cao, J. ^{[1
,2
]}

Fan, W. ^{[1
,3
]}

Chen, K. ^{[4
]}

Tamura, N. ^{[4
]}

Kunz, M. ^{[4
]}

Eyert, V. ^{[5
]}

Wu, J. ^{[1
,2
]}

机构：

[1] Univ Calif Berkeley, Dept Mat Sci & Engn, Berkeley, CA 94720 USA

[2] Lawrence Berkeley Natl Lab, Div Mat Sci, Berkeley, CA 94720 USA

[3] Univ Sci & Technol China, Dept Thermal Sci & Energy Engn, Hefei 230026, Peoples R China

[4] Lawrence Berkeley Natl Lab, Adv Light Source, Berkeley, CA 94720 USA

[5] Univ Augsburg, Inst Phys, D-86135 Augsburg, Germany

来源：

PHYSICAL REVIEW B | 2010年 / 82卷 / 24期

基金：

美国国家科学基金会;

关键词：

VANADIUM DIOXIDE; ELECTRONIC-PROPERTIES; MOTT TRANSITION; BAND THEORY; TEMPERATURE; NANOBEAMS; ORGANIZATION; PEIERLS; HUBBARD; DOMAINS;

D O I：

10.1103/PhysRevB.82.241101

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report a constant threshold resistivity observed for the insulating phase of VO2 before it transfers into the metallic phase, regardless of the initial resistivity, transition temperature, and strain state. The value of the threshold resistivity is also comparable for different lattice structures of the insulating phase. Such a constant threshold resistivity suggests that a constant critical free-electron concentration is needed on the insulating side to trigger the insulator-to-metal transition, indicating the electronic nature of the mechanism of the transition.

引用

页数：4

共 33 条

[1]

BERGLUND CN, 1969, PHYS REV, V185, P1022, DOI 10.1103/PhysRev.185.1022

[2] HYDROSTATIC-PRESSURE DEPENDENCE OF ELECTRONIC PROPERTIES OF VO2 NEAR SEMICONDUCTOR-METAL TRANSITION TEMPERATURE [J].

BERGLUND, CN ;

JAYARAMAN, A .

PHYSICAL REVIEW, 1969, 185 (03) :1034-+

[3] Dynamical singlets and correlation-assisted peierls transition in VO2 -: art. no. 026404 [J].

Biermann, S ;

Poteryaev, A ;

Lichtenstein, AI ;

Georges, A .

PHYSICAL REVIEW LETTERS, 2005, 94 (02) :1-4

[4] Extended Mapping and Exploration of the Vanadium Dioxide Stress-Temperature Phase Diagram [J].

Cao, J. ;

Gu, Y. ;

Fan, W. ;

Chen, L. Q. ;

Ogletree, D. F. ;

Chen, K. ;

Tamura, N. ;

Kunz, M. ;

Barrett, C. ;

Seidel, J. ;

Wu, J. .

NANO LETTERS, 2010, 10 (07) :2667-2673

[5]

Cao J, 2009, NAT NANOTECHNOL, V4, P732, DOI [10.1038/nnano.2009.266, 10.1038/NNANO.2009.266]

[6] Band-selective measurements of electron dynamics in VO2 using femtosecond near-edge x-ray absorption -: art. no. 067405 [J].

Cavalleri, A ;

Rini, M ;

Chong, HHW ;

Fourmaux, S ;

Glover, TE ;

Heimann, PA ;

Kieffer, JC ;

Schoenlein, RW .

PHYSICAL REVIEW LETTERS, 2005, 95 (06)

[7] UNIVERSAL CONDUCTIVITY OF 2-DIMENSIONAL FILMS AT THE SUPERCONDUCTOR-INSULATOR TRANSITION [J].

CHA, MC ;

FISHER, MPA ;

GIRVIN, SM ;

WALLIN, M ;

YOUNG, AP .

PHYSICAL REVIEW B, 1991, 44 (13) :6883-6902

[8] Complexity in strongly correlated electronic systems [J].

Dagotto, E .

SCIENCE, 2005, 309 (5732) :257-262

[9]

Eyert V, 2002, ANN PHYS-BERLIN, V11, P650, DOI 10.1002/1521-3889(200210)11:9<650::AID-ANDP650>3.0.CO

[10]

2-K

← 1 2 3 4 →