Microstructure of laterally overgrown GaN layers

被引：50

作者：

Liliental-Weber, Z ^{[1
]}

Cherns, D ^{[1
]}

机构：

[1] Univ Bristol, HH Wills Phys Lab, Bristol BS8 1TL, Avon, England

来源：

JOURNAL OF APPLIED PHYSICS | 2001年 / 89卷 / 12期

关键词：

D O I：

10.1063/1.1370366

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Transmission electron microscopy study of plan-view and cross-section samples of epitaxial laterally overgrown (ELOG) GaN samples is described. Two types of dislocation with the same type of Burgers vector but different line direction have been observed. It is shown that threading edge dislocations bend to form dislocation segments in the c plane as a result of shear stresses developed in the wing material along the stripe direction. It is shown that migration of these dislocations involves both glide and climb. Propagation of threading parts over the wing area is an indication of high density of point defects present in the wing areas on the ELOG samples. This finding might shed light on the optical properties of such samples. (C) 2001 American Institute of Physics.

引用

页码：7833 / 7840

页数：8

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