Origin of the nonradiative ⟨11(2)over-bar0⟩ line defect in lateral epitaxy-grown GaN on SiC substrates

被引：11

作者：

Hacke, P ^{[1
]}

Domen, K ^{[1
]}

Kuramata, A ^{[1
]}

Tanahashi, T ^{[1
]}

Ueda, O ^{[1
]}

机构：

[1] Fujitsu Labs Ltd, Atsugi, Kanagawa 2430197, Japan

来源：

APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 18期

关键词：

D O I：

10.1063/1.126404

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Nonradiative line defects are observed by cathodoluminescence in [(2) over bar 110] directions in [1 (1) over bar 00]-oriented GaN stripes grown by lateral epitaxy on SiC substrates. Using transmission electron microscopy, the origin is determined to be principally screw dislocations. We observe the screw dislocations in vertically [0001] stacked configurations and forming dislocation loops and half loops contained in two of the three planes of the form {1 (1) over bar 00}. The dislocations are believed to serve to relax the anisotropic stresses experienced in the lateral epitaxy-overgrown stripes. (C) 2000 American Institute of Physics. [S0003-6951(00)03918-8].

引用

页码：2547 / 2549

页数：3

共 10 条

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[2]

Hirsch, 1965, ELECT MICROSCOPY THI

[3]

Hirth JP., 1982, Theory of Dislocations

[4]

Marchand H, 1999, MRS INTERNET J N S R, V4