New phase formation of Gd2O3 films on GaAs(100)

被引：9

作者：

Kortan, AR

Hong, M

Kwo, J

Mannaerts, JP

Krajewski, JJ

Kopylov, N

Steiner, C

Bolliger, B

Erbudak, M

机构：

[1] Bell Labs, Lucent Technol, Murray Hill, NJ 07974 USA

[2] Agere Syst Inc, Murray Hill, NJ 07974 USA

[3] Swiss Fed Inst Technol, Festkorperphys Lab, CH-8093 Zurich, Switzerland

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2001年 / 19卷 / 04期

关键词：

D O I：

10.1116/1.1387456

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A fluorite-related phase of Gd2O3, with a tetragonal unit cell of a = 5.65 Angstrom and c = 5.37 Angstrom, was attained in this study. The new phase was found either in a thin Gd2O3 film (similar to 18 Angstrom), which was epitaxially grown on GaAs(100). or in a disordered (by mild Ne+-ion sputtering) and recrystallized (by UHV annealing) thin cubic alpha -Gd2O3 film. The structural characteristics of the new oxide films were studied using in situ reflection high-energy electron diffraction, secondary-electron imaging, and single-crystal x-ray diffraction. (C) 2001 American Vacuum Society.

引用

页码：1434 / 1438

页数：5

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