Characterization of line-edge roughness in resist patterns and estimation of its effect on device performance

被引：71

作者：

Yamaguchi, A ^{[1
]}

Tsuchiya, R ^{[1
]}

Fukuda, H ^{[1
]}

Komuro, O ^{[1
]}

Kawada, H ^{[1
]}

Iizumi, T ^{[1
]}

机构：

[1] Hitachi Ltd, Cent Res Lab, Kokubunji, Tokyo 1858601, Japan

来源：

METROLOGY, INSPECTION, AND PROCESS CONTROL FOR MICROLITHOGRAPHY XVII, PTS 1 AND 2 | 2003年 / 5038卷

关键词：

line edge roughness; CD-SEM; measurement parameter; device performance;

D O I：

10.1117/12.483519

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

A guideline for evaluating LER and total procedure to estimate effects of measured LER on device performance were proposed. Spatial-frequency distributions of LER in various resist materials were investigated and general characteristics of spatial-frequency distribution of LER were obtained. Measurement parameters for accurate LER measurement can be calculated according to the guideline. Measured line-width distribution was used to predicting degradation and variation in MOS transistor performance using the two-dimensional device simulation. Effect of long-period component of LER was clarified as well as short-period component.

引用

页码：689 / 698

页数：10

共 6 条

[1]

CROOK J, 2002, IN PRESS J OCCUP REH, P12

[2] An experimentally validated analytical model for gate line-edge roughness (LER) effects on technology scaling [J].

Díaz, CH ;

Tao, HJ ;

Ku, YC ;

Yen, A ;

Young, K .

IEEE ELECTRON DEVICE LETTERS, 2001, 22 (06) :287-289

[3] Amplitude and spatial frequency characterization of line edge roughness using CD-SEM [J].

Eytan, G ;

Dror, O ;

Ithier, L ;

Florin, B ;

Lamouchi, Z ;

Martin, N .

METROLOGY, INSPECTION, AND PROCESS CONTROL FOR MICROLITHOGRAPHY XVI, PTS 1 & 2, 2002, 4689 :347-355

[4]

Linton SJ, 2002, PAIN RES CL, V12, P1

[5] Study of gate line edge roughness effects in 50 nm bulk MOSFET devices [J].

Xiong, SY ;

Bokor, J ;

Xiang, Q ;

Fisher, P ;

Dudley, I ;

Rao, P .

METROLOGY, INSPECTION, AND PROCESS CONTROL FOR MICROLITHOGRAPHY XVI, PTS 1 & 2, 2002, 4689 :733-741

[6]

YAMAGUCHI A, UNPUB JPN J APPL PHY

← 1 →