Characterization of nitrogen-doped Sb2Te3 films and their application to phase-change memory

被引：101

作者：

Yin, You ^{[1
]}

Sone, Hayato ^{[1
]}

Hosaka, Sumio ^{[1
]}

机构：

[1] Gunma Univ, Grad Sch Engn, Dept Nanomat Syst, Gunma 3768515, Japan

来源：

JOURNAL OF APPLIED PHYSICS | 2007年 / 102卷 / 06期

关键词：

RANDOM-ACCESS MEMORY; LOW RESET CURRENT; ELECTRICAL-PROPERTIES; GE2SB2TE5; CELL; GESBTE;

D O I：

10.1063/1.2778737

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this study, sputtered undoped and nitrogen doped Sb2Te3 (ST and STN) films were systematically investigated by x-ray diffraction (XRD) and resistance measurements. Their application to lateral phase-change memory (PCM) is presented as well. The STN film sputtered at a flow rate ratio (N-2/Ar) of 0.07 proved to have both high stability and low power consumption, implying its high performance in PCM applications. In the STN films (N-2/Ar>0.15), the hexagonal Te phase first appeared at 160 degrees C, and then the orthorhombic SbN phase appeared at 290 degrees C. The phase separation made it very difficult for these films to switch reversibly between the crystalline and the amorphous phase.

引用

页数：5

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