Non-volatile memory technologies: emerging concepts and new materials

被引：212

作者：

Bez, R ^{[1
]}

Pirovano, A ^{[1
]}

机构：

[1] ST Microelect, Non Volatile Memory Technol Dev, Cent R&D, I-20041 Agrate Brianza, Italy

来源：

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2004年 / 7卷 / 4-6期

关键词：

D O I：

10.1016/j.mssp.2004.09.127

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The current mainstream, based on the Flash technology, is expected to be the reference technology also for the next few years. Nevertheless Flash has technological and physical constraints that make more difficult their further scaling. In this contest there is the industrial interest for alternative technologies that exploit new materials and concepts to go beyond the Flash technology, to allow better scaling, and to enlarge the memory performance. The main emerging nonvolatile memory technologies based on inorganic material, like ferroelectric memory (FeRAM), magneto resistive memory (MRAM) or phase change memory (PCM) and the main innovative concepts based on organic material like ferroelectric or conductance switching polymer will therefore be analysed. We will then focus the attention on PCM technology as one of the best candidate as next-decade non-volatile memory technology, covering the main characteristics and presenting the latest development results. (C) 2004 Elsevier Ltd. All rights reserved.

引用

页码：349 / 355

页数：7

共 16 条

[1] An 8Mb demonstrator for high-density 1.8V phase-change memories [J].

Bedeschi, F ;

Resta, C ;

Khouri, O ;

Buda, E ;

Costa, L ;

Ferraro, M ;

Pellizzer, F ;

Ottogalli, F ;

Pirovano, A ;

Tosi, M ;

Bez, R ;

Gastaldi, R ;

Casagrande, G .

2004 SYMPOSIUM ON VLSI CIRCUITS, DIGEST OF TECHNICAL PAPERS, 2004, :442-445

[2] Introduction to Flash memory [J].

Bez, R ;

Camerlenghi, E ;

Modelli, A ;

Visconti, A .

PROCEEDINGS OF THE IEEE, 2003, 91 (04) :489-502

[3]

Chen YC, 2003, 2003 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST, P905

[4]

Cho WY, 2004, ISSCC DIG TECH PAP I, V47, P40

[5]

De Salvo B, 2003, 2003 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST, P597

[6]

Durlam M, 2003, 2003 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST, P995

[7]

HA YH, 2003, S VLSI TECH

[8]

Hwang YN, 2003, 2003 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST, P893

[9]

Ishiwara H, 2003, 2003 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST, P263

[10]

Lai S, 2003, 2003 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST, P255

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