A new method or temperature mapping on GaAs field effect transistors

In this paper, a method is described, how to apply the technique of spatially resolved photoluminescence (PL) spectroscopy for the measurement of the local channel temperature in GsAs-based field effect transistors. This spectroscopic technique uses a focused laser beam which scans directly the surface of a chip inside its package. The temperature is deduced from the corresponding wavelength shift of the PL peak. In the case of a typical heterostructure-based transistor (like the pseudomorphic high electron mobility transistors studied here) a spatial resolution of 1 mu m and a temperature resolution of +/- 1 degrees C is demonstrated. (C) 1998 Elsevier Science Ltd. All rights reserved.