Electric field distribution in CdTe and Cd1-xZnxTe nuclear detectors

被引：47

作者：

Zumbiehl, A

Hage-Ali, M

Fougeres, P

Koebel, JM

Regal, R

Siffert, P

机构：

[1] PHASE, CNRS, F-67037 Strasbourg, France

[2] EURORAD IIIV, F-67037 Strasbourg, France

来源：

JOURNAL OF CRYSTAL GROWTH | 1999年 / 197卷 / 03期

关键词：

electric field; pockels effect; CdTe; CdZnTe; nuclear detectors;

D O I：

10.1016/S0022-0248(98)00764-7

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Internal field measurement in nuclear radiation detectors has always been a very difficult task. Hopefully, II-VI semiconductors, and all zinc blende structure, have a strong linear electro-optical coefficient, which allows to make use of Pockels effect. CdTe and CdZnTe are IR transparent and polarized light transmission is strongly related to the internal electric field. Therefore. IR transmission provides us powerful tools for electric field mapping. Detectors with several geometry have been investigated for improving detection quality. (C), 1999 Elsevier Science B.V. All rights reserved.

引用

页码：650 / 654

页数：5

共 8 条

[1] Infra-red microscopy of Cd(Zn)Te radiation detectors revealing their internal electric field structure under bias [J].