Single charge carrier type sensing with a parallel strip pseudo-Frisch-grid CdZnTe semiconductor radiation detector

被引：84

作者：

McGregor, DS ^{[1
]}

He, Z

Seifert, HA

Wehe, DK

Rojeski, RA

机构：

[1] Univ Michigan, Dept Nucl Engn & Radiol Sci, Ann Arbor, MI 48109 USA

[2] Etec Syst Inc, Hayward, CA 94545 USA

来源：

APPLIED PHYSICS LETTERS | 1998年 / 72卷 / 07期

关键词：

D O I：

10.1063/1.120895

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An improvement in gamma-ray energy resolution is demonstrated for a room-temperature operated CdZnTe semiconductor detector that incorporates a parallel strip pseudo-Frisch-grid detector design. The device construction allows primarily for the measurement of electron charge carriers and not hole charge carriers. The detector is a three-terminal device that requires signal output to only one preamplifier, and its simplistic design offers an alternative method to single charge carrier type sensing to that of coplanar semiconductor gamma-ray detector designs. (C) 1998 American Institute of Physics.

引用

页码：792 / 794

页数：3

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