1-D position sensitive single carrier semiconductor

被引：113

作者：

He, Z ^{[1
]}

Knoll, GF ^{[1
]}

Wehe, DK ^{[1
]}

Rojeski, R ^{[1
]}

Mastrangelo, CH ^{[1
]}

Hammig, M ^{[1
]}

Barrett, C ^{[1
]}

Uritani, A ^{[1
]}

机构：

[1] UNIV MICHIGAN,DEPT ELECT ENGN & COMP ENGN,ANN ARBOR,MI 48109

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 1996年 / 380卷 / 1-2期

关键词：

D O I：

10.1016/S0168-9002(96)00352-X

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

A single polarity charge sensing method has been studied using coplanar electrodes on 5 mm cubes of CdZnTe gamma-ray detectors. This method can ameliorate the hole trapping problem of room-temperature semiconductor detectors. Our experimental results confirm that the energy resolution is dramatically improved compared with that obtained using the conventional readout method, but is still about an order of magnitude worse than the theoretical limit. A method to obtain the gamma-ray interaction depth between the cathode and the anode is presented here. This technique could be used to correct for the electron trapping as a function of distance from the coplanar electrodes. Experimental results showed that a position resolution of about 0.9 mm FWHM at 122 keV can be obtained. These results will be of interest in the design of higher performance room-temperature semiconductor gamma-ray detectors.

引用

页码：228 / 231

页数：4

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