Synthesis and characterization of heterostructured Mn3GaN0.5/GaN nanowires

被引:10
作者
Ha, B
Kim, HC
Kang, SG
Kim, YH
Lee, JY
Park, CY
Lee, CJ [1 ]
机构
[1] Hanyang Univ, Dept Nanotechnol, Seoul 133791, South Korea
[2] Hanyang Univ, Div Adv Mat Sci & Engn, Seoul 133791, South Korea
[3] Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South Korea
[4] Sungkyunkwan Univ, Dept Phys, Ctr Nanotubes & Nanostruct Composites, Suwon 440746, South Korea
关键词
D O I
10.1021/cm050557j
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Heterostructured Mn3GaN0.5/GaN nanowires have been synthesized by a catalytic chemical vapor deposition method. Mn3GaN0.5/GaN nanowires exhibit ferromagnetic properties with a Curie temperature above room temperature. It was observed that the acceptor Mn2+/Mn3+ (Mn 3d) levels superpose on the GaN energy levels, shifting the energy of 5.8 eV toward Fermi energy. Compared with GaN nanowires, the (DX)-X-0 line of Mn3GaN0.5/GaN at 397.8 nm (3.117 eV) indicated the 33.4 nm red-shift due to hole-doping in the PL spectra. The synthesized Mn3GaN0.5/GaN nanowires had the relatively high yellow band emission of about 596.5 nm, due to the internal T-4(1) -> (6)A(1) transition of Mn2+ (3d(5)), which is permitted by selection rules. The sharp peak at 675.6 nm in Mn3GaN0.5/GaN nanowire PL spectra might correspond to the transition T-4(2) -> defect state.
引用
收藏
页码:5398 / 5403
页数:6
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