Synthesis and characterization of heterostructured Mn3GaN0.5/GaN nanowires

被引:10
作者
Ha, B
Kim, HC
Kang, SG
Kim, YH
Lee, JY
Park, CY
Lee, CJ [1 ]
机构
[1] Hanyang Univ, Dept Nanotechnol, Seoul 133791, South Korea
[2] Hanyang Univ, Div Adv Mat Sci & Engn, Seoul 133791, South Korea
[3] Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South Korea
[4] Sungkyunkwan Univ, Dept Phys, Ctr Nanotubes & Nanostruct Composites, Suwon 440746, South Korea
关键词
D O I
10.1021/cm050557j
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Heterostructured Mn3GaN0.5/GaN nanowires have been synthesized by a catalytic chemical vapor deposition method. Mn3GaN0.5/GaN nanowires exhibit ferromagnetic properties with a Curie temperature above room temperature. It was observed that the acceptor Mn2+/Mn3+ (Mn 3d) levels superpose on the GaN energy levels, shifting the energy of 5.8 eV toward Fermi energy. Compared with GaN nanowires, the (DX)-X-0 line of Mn3GaN0.5/GaN at 397.8 nm (3.117 eV) indicated the 33.4 nm red-shift due to hole-doping in the PL spectra. The synthesized Mn3GaN0.5/GaN nanowires had the relatively high yellow band emission of about 596.5 nm, due to the internal T-4(1) -> (6)A(1) transition of Mn2+ (3d(5)), which is permitted by selection rules. The sharp peak at 675.6 nm in Mn3GaN0.5/GaN nanowire PL spectra might correspond to the transition T-4(2) -> defect state.
引用
收藏
页码:5398 / 5403
页数:6
相关论文
共 29 条
  • [11] Growth of nanowire superlattice structures for nanoscale photonics and electronics
    Gudiksen, MS
    Lauhon, LJ
    Wang, J
    Smith, DC
    Lieber, CM
    [J]. NATURE, 2002, 415 (6872) : 617 - 620
  • [12] Ferromagnetic Mn-doped GaN nanowires
    Han, DS
    Park, J
    Rhie, KW
    Kim, S
    Chang, J
    [J]. APPLIED PHYSICS LETTERS, 2005, 86 (03) : 1 - 3
  • [13] Synthesis of gallium nitride nanorods through a carbon nanotube-confined reaction
    Han, WQ
    Fan, SS
    Li, QQ
    Hu, YD
    [J]. SCIENCE, 1997, 277 (5330) : 1287 - 1289
  • [14] Mid gap photoluminescence from GaN:Mn, a magnetic semiconductor
    Joshi, NV
    Medina, H
    Cantarero, A
    Ambacher, O
    [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 2003, 64 (9-10) : 1685 - 1689
  • [15] Epitaxial core-shell and core-multishell nanowire heterostructures
    Lauhon, LJ
    Gudiksen, MS
    Wang, CL
    Lieber, CM
    [J]. NATURE, 2002, 420 (6911) : 57 - 61
  • [16] Field emission from well-aligned zinc oxide nanowires grown at low temperature
    Lee, CJ
    Lee, TJ
    Lyu, SC
    Zhang, Y
    Ruh, H
    Lee, HJ
    [J]. APPLIED PHYSICS LETTERS, 2002, 81 (19) : 3648 - 3650
  • [17] Catalytic synthesis and photoluminescence of gallium nitride nanowires
    Lyu, SC
    Cha, OH
    Suh, EK
    Ruh, H
    Lee, HJ
    Lee, CJ
    [J]. CHEMICAL PHYSICS LETTERS, 2003, 367 (1-2) : 136 - 140
  • [18] Spin injection into semiconductors
    Oestreich, M
    Hübner, J
    Hägele, D
    Klar, PJ
    Heimbrodt, W
    Rühle, WW
    Ashenford, DE
    Lunn, B
    [J]. APPLIED PHYSICS LETTERS, 1999, 74 (09) : 1251 - 1253
  • [19] Electrical spin injection in a ferromagnetic semiconductor heterostructure
    Ohno, Y
    Young, DK
    Beschoten, B
    Matsukura, F
    Ohno, H
    Awschalom, DD
    [J]. NATURE, 1999, 402 (6763) : 790 - 792
  • [20] Wide bandgap GaN-based semiconductors for spintronics
    Pearton, SJ
    Abernathy, CR
    Thaler, GT
    Frazier, RM
    Norton, DP
    Ren, F
    Park, YD
    Zavada, JM
    Buyanova, A
    Chen, WM
    Hebard, AF
    [J]. JOURNAL OF PHYSICS-CONDENSED MATTER, 2004, 16 (07) : R209 - R245